Knowledge Transfer Involving HQP

Nanowire Photovoltaics

Journal Publications

  • S. Zhao, A. T. Connie, M. H. T. Dastjerdi, X. Kong, Q. Wang, S. M. Sadaf, X. Liu, I. Shih, H. Guo, and Z. Mi, Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources, Nature Scientific Reports, vol. 5, 8332, 2015.
  • A. Darbandi, O. Salehzadeh, P. Kuyanov, R. R. LaPierre, and S. P. Watkins, Surface passivation of tellurium-doped GaAs nanowires by GaP: effect on electrical conduction, J. Appl. Phys. 115 (2014) 234305.
  • Q. Wang, X. Liu, S. Zhao, M. G. Kibria, H. P. T. Nguyen, K. H. Li, Z. Mi, T. Gonzalez, and M. Andrews, p-type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy, Nanoscale 6 (2014) 9970.
  • R. Wang, H. P. T. Nguyen, A. T. Connie, J. Lee, I. Shih, and Z. Mi, Color-tunable, phosphor-free InGaN nanowire light emitting diode arrays monolithically integrated on silicon, Opt. Exp., vol. 22, A1768-A1772, 2014.
  • S. Zhang, A. T. Connie, D. A. Laleyan, H. P. T. Nguyen, Q. Wang, J. Sun, I. Shih, and Z. Mi, On the carrier injection efficiency and thermal property of InGaN/GaN axial nanowire light emitting diodes, IEEE J. Quantum Electron., vol. 50, iss. 6, pp 483-490, 2014.
  • J.P. Boulanger and R.R. LaPierre, “Unveiling transient GaAs/GaP nanowire growth behavior using group V oscillations”, J. Cryst. Growth 388 (2014) 116.
  • M. Fanetti, S. Ambrosini, Matteo Amati, L. Gregoratti, M.K. Abianeh, A. Franciosi, A.C.E. Chia, R.R. LaPierre and S. Rubini, “Spatially resolved monitoring of the Fermi-edge position inside the energy gap: a tool for local investigation of doping in nanowires”, J. Appl. Phys. 114 (2013) 154308.
  • S.J. Gibson, J.P. Boulanger and R.R. LaPierre, “Opportunities and pitfalls in patterned self-catalyzed GaAs nanowire growth on silicon”, Semicond. Sci. Technol. 28 (2013) 105025.
  • H. P. T. Nguyen, M. Djavid, and Z. Mi, “Nonradiative Recombination Mechanism in Phosphor-Free GaN-Based Nanowire White Light Emitting Diodes and the effect of Ammonium Sulfide Surface Passivation,” ECS Transactions, vol. 53, pp. 93-100, 2013.
  • O. Salehzadeh, K. L. Kavanagh and S. P. Watkins, Geometric limits of coherent wurtzite InAs/InP core/shell nanowires, J. Appl. Phys. 114 (2013) 054301.
  • O. Salehzadeh, K. L. Kavanagh and S. P. Watkins, Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells, J. Appl. Phys. 113 (2013) 134309.
  • S.J. Gibson, J.P. Boulanger and R.R. LaPierre, Opportunities and pitfalls in patterned self-catalyzed GaAs nanowire growth on silicon, Semicond. Sci. Technol. 28 (2013) 105025.
  • A.C.E Chia, M. Tirado, F. Thouin, R. Leonelli, D. Comedi and R.R. LaPierre, Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires, Semicond. Sci. Technol. 28 (2013) 105026.
  • A.C.E Chia and R.R. LaPierre, Electrostatic model of radial pn junction nanowires, J. Appl. Phys. 114 (2013) 074317.
  • R.R. LaPierre, A.C.E. Chia, S.J. Gibson, C.M. Haapamaki, J. Boulanger, R. Yee, P. Kuyanov, J. Zhang, N. Tajik, N. Jewell and K.M.A. Rahman, III-V nanowire photovoltaics:Review of design for high efficiency, P hys. Status Solidi RRL 7 (2013) 815.
  • S. Zhao, O. Salehzadeh, S. Alagha, K.L. Kavanagh, S.P. Watkins, and Z. Mi, “Probing the electrical transport properties of intrinsic InN nanowires”, Appl. Phys. Lett. 102, 073102 (2013).
  • O. Salehzadeh, K. L. Kavanagh, and S. P. Watkins, “Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells”, accepted in J. Appl. Phys. February 2012.
  • O. Salehzadeh, X. Zhang, B.D. Gates, K.L. Kavanagh, S.P. Watkins, “p-type doping of GaAs nanowires using carbon”, J. Appl. Physics, 112, 094323 (2012).
  • O. Salehzadeh, K.L. Kavanagh, and S.P Watkins, “Controlled axial and radial Te-doping of GaAs nanowires”, J. Appl. Phys. 112, 054324 (2012).
  • C. Liu, O. Salehzadeh, P. J. Poole, S. P. Watkins, and K. L. Kavanagh, “Insights into semiconductor nanowire conductivity using electrodeposition”, Semiconductor Science and Technology 27, 105020 (2012).
  • A.C.E. Chia, J.P. Boulager and R.R. LaPierre, “Unlocking doping and compositional profiles of nanowire ensembles using SIMS”, Nanotechnology 24 (2013) 045701.
  • N. Tajik, A.C.E. Chia and R.R. LaPierre, “Improved conductivity and long-term stability of sulfur-passivated n-GaAs nanowires”, Appl. Phys. Lett. 100 (2012) 203122.
  • A.C.E. Chia and R.R. LaPierre, “Analytical model of surface depletion in GaAs nanowires”, J. Appl. Phys. 112 (2012) 063705.
  • A.C.E Chia, M. Tirado, Y. Li, S. Zhao, Z. Mi, D. Comedi and R.R. LaPierre, “Electrical transport and optical model of GaAs-AlInP core-shell nanowires”, J. Appl. Phys. 111 (2012) 094319.
  • J.P. Boulanger and R.R. LaPierre, “Patterned gold-assisted growth of GaP nanowires on Si”, Semicond. Sci. Technol. 27 (2012) 035002.
  • A.C.E. Chia and R.R. LaPierre, “Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires”, J. Appl. Phys. 112 (2012) 063705.
  • J.P. Boulanger and R.R. LaPierre, Polytype formation in GaAs/GaP axial nanowire heterostructures, J. Cryst. Growth 332 (2011) 21.
  • A.C.E. Chia and R.R. LaPierre, “Contact planarization of ensemble nanowires”, Nanotechnology 22 (2011) 245304.
  • H. P. T. Nguyen, Y.-L Chang, I. Shih and Z. Mi, “InN p-i-n nanowire solar cells on Si”, IEEE J. Sel. Topics Quantum Electron. 17 17 (2011) 1062.
  • O. Salehzadeh, M. X. Chen, K. L. Kavanagh, S. P. Watkins, “Rectifying characteristics of Te-doped GaAs nanowires”, Appl. Phys. Lett. 99, 182102,(2011).
  • O. Salehzadeh, S.P. Watkins, “Control of GaAs nanowire morphology by group III precursor chemistry”, J. Cryst. Growth, 325, 5, (2011).
  • O. Salehzadeh, S.P. Watkins, “Effect of carbon dopant on the morphology of GaAs Nanowires”, Nanotechnology. 22, 165603 , (2011).
  • O. Salehzadeh and S P Watkins, “Effect of carbon tetrabromide on the morphology of GaAs nanowires”, Nanotechnology 22 (2011) 165603.
  • J.P. Boulanger and R.R. LaPierre, Patterned gold-assisted growth of GaP nanowires on Si, Semicond. Sci. Technol. 27 (2012) 035002.
  • A.C.E. Chia and R.R. LaPierre, “Contact planarization of ensemble nanowires”, Nanotechnology 22 (2011) 245304.
  • H. P. T. Nguyen, Y.-L Chang, I. Shih and Z. Mi, “InN p-i-n nanowire solar cells on Si”, IEEE J. Sel. Topics Quantum Electron. 17 17 (2011) 1062.
  • O. Salehzadeh and S P Watkins , “Effect of carbon tetrabromide on the morphology of GaAs nanowires”, Nanotechnology 22 (2011) 165603.

Conference Proceedings

  • A.C.E. Chia and R.R. LaPierre, “Surface passivation of GaAs nanowire ensembles for photovoltaic applications”, oral presentation, Proceedings of Nanotech 2013 (May 12-15, Washington, DC).

Journal Publications (Accepted)

  • J. Zhang, A. Chia and R.R. LaPierre, “Low resistance indium tin oxide contact to n-GaAs nanowires”, Semicond. Sci. Technol. (accepted for publication, 2014).

Journal Publications (Submitted)

  • A. Darbandi, K. L. Kavanagh, and S. P. Watkins, Lithography-free fabrication of core-shell GaAs nanowire tunnel diodes, submitted to Nano Lett.
  • O. Salehzadeh, K.L. Kavanagh, S.P. Watkins, “Electrical properties of carbon doped GaAs nanowires” to be submitted to J. Appl. Phys.
  • O. Salehzadeh, K.L. Kavanagh, S.P. Watkins “Electrical properties of Te-doped GaAs nanowires” to be submitted to J. Appl. Phys.

Journal Publications (In Preparation)

  • O. Salehzadeh, S. Alagha, Igor Saveliev, H. Ruda, S. P. Watkins, K. L. Kavanagh, Effects of Structural Kinks and Diameter on InAs Nanowire Mobility, in preparation 2013.

Presentations (Invited)

  • Oral Presentation (Invited), R.R. LaPierre, A. Rahman, M. Robson, P. Kuyanov, A. Chia, J. Boulanger, III-V nanowires on Si for infrared cameras, photodetectors and solar cells, The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI 9) (May 17-22, 2015, Montreal, Canada).
  • Oral Presentation (Invited), R.R. LaPierre, A. Rahman, M. Robson, P. Kuyanov, A. Chia, J. Boulanger, III-V nanowires on Si for infrared cameras, photodetectors and solar cells, Universidade de Sao Paulo (Apr 17, 2015, Sao Paulo, Brazil).
  • Oral Presentation (Invited), Z. Mi, S. Zhao, X. Liu, A. T. Connie, K. H. Li, and Q. Wang, High efficiency AlGaN deep ultraviolet nanowire LEDs and lasers on Si, SPIE Photonics West, San Francisco, Feb. 7-12, 2015.
  • Oral Presentation (Invited), R.R. LaPierre, Nanowire infrared cameras, photodetectors and solar cells, Seminar at Laboratoire de Photonique et de Nanostructures, Centre National de la Recherche Scientifique (Jan 9, 2015, Paris, France).
  • Oral Presentation (Invited), S. Watkins, Controlled growth, doping, and electrical characterization of semiconductor nanowire structures, Nelson Mandela Metropolitan University, Port Elizabeth, South Africa, December 5, 2014.
  • Oral Presentaiton (Invited), S. Watkins, Nanoprobe electrical measurements of single nanowire structures, SPIE Conference, August 2014, San Diego; Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 917403 (September 16, 2014); doi:10.1117/12.2065265.
  • Oral Presentation (Invited), S.P Watkins, “Nanowire electrical properties using the nanoprobe method: advantages and limitations”, 30th North American Conference on Molecular Beam Epitaxy (NAMBE 2013), Banff 11 October, 2013, paper delivered at special workshop.
  • Oral Presentation (Invited), S.P. Watkins, “Control of III-V nanowire growth for prototype device structures”, 16th Canadian Semiconductor Science and Technology Conference, Thunder Bay Ontario, delivered 15 August 2013.
  • Oral Presentation (Invited), R.R. LaPierre, Progress in III-V nanowire photovoltaics, Nanowires 2013 Conference (Nov 12-14, 2013, Rehovot, Israel).
  • Oral Presentation (Invited Keynote Speaker), R.R. LaPierre, Semiconductor nanowires: New frontiers in physics and engineering, NanoOntario 2013 (Nov 7-8, 2013, Kingston, Ontario).
  • Oral Presentation (Invited), R.R. LaPierre, Compound semiconductor nanowire growth and applications, SPIE Optics and Photonic Meeting on “Nanoepitaxy: Materials and Devices V” (Aug 25-29, 2013, San Diego, California, USA).
  • Oral Presentation (Invited), R.R. LaPierre, Nanowire Photovoltaics, Photonics North (Jun 3-5, 2013, Ottawa, Canada).
  • Oral Presentation (Invited), Canadian Semiconductor Technology Conference 2013, Thunder Bay (Watkins, Salehzadeh, Dharbandi, Kavanagh).
  • Oral Presentation (Invited), North American MBE Conference 2013 (Watkins, Salehzadeh, Dharbandi, Kavanagh).
  • Oral Presentation (Invited), R.R. LaPierre, A.C.E. Chia, C.M. Haapamaki and N. Tajik, Passivation of III-V nanowires for optoelectronics, 221st Electrochemical Society Meeting (May 6-11, 2012, Seattle, WA).
  • R.R. LaPierre, A.C.E. Chia, C.M. Haapamaki, N. Tajik, Y. Li, S. Zhao, and Z. Mi,  “Passivation of III-V Nanowires for Optoelectronics”, 221st Electrochemical Society Meeting (May 6 – 10, 2012, Seattle, WA).
  • S.P. Watkins (with content from  O. Salehzadeh),  “Metalorganic chemical vapour deposition of semiconductor nanowires”, Canadian Chemistry Conference,  Calgary, 28 May 2012.
  • Oral Presentation (Invited), Omid Salehzadeh and Simon Watkins, “Control of nanowire heterostructures and doping via precursor chemistry”, CMOSET Conference (Whistler BC, June 15, 2011).
  • (Invited) Z. Mi, Y.-L. Chang, H. Nguyen, and K. Cui, “Prospects and challenges of InN based nanoscale heterostructures and devices integrated on Si,” SPIE/COS Photonics Asia, Beijing, China, Oct. 2010.

Presentations (Oral)

  • Oral Presentation, J. McNeil, A. Darbandi, S.P. Watkins, and K.L. Kavanagh, Built-in potential maps of semiconductor nanowire junctions, 17th Canadian Semiconductor Science and Technology Conference (Sherbrooke, August 16-21, 2015).
  • Oral Presentation, A. Darbandi and S.P. Watkins, GaAs core-shell nanowire tunnel diodes grown by organometallic vapor phase epitaxy, 17th Biennial OMVPE Workshop (Montana, Aug 2-7, 2015).
  • Oral Presentation (Invited), R.R. LaPierre, A. Rahman, M. Robson, P. Kuyanov, A. Chia, J. Boulanger, III-V nanowires on Si for infrared cameras, photodetectors and solar cells, The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI 9) (May 17-22, 2015, Montreal, Canada).
  • S. Zhang, A. T. Connie, H. P. T. Nguyen, Q. Wang, I. Shih, and Z. Mi, Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes, Conference on Lasers and Electro-Optics, San Jose, CA, USA, June 8-13, 2014.
  • Zhang, A.C.E Chia and R.R. LaPierre, Low resistance indium tin oxide contacts to n-GaAs nanowires, Materials Research Society Spring Meeting (April 21-25, 2014, San Francisco).
  • B. H. Le, N. H. Tran, H. P. T. Nguyen and Z. Mi, “InGaN/GaN dot-in-a-wire intermediate-band solar cell devices”, 30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5-11, 2013.
  • Mattia Fanetti, Stefano Ambrosini, Matteo Amati, Majid K. Abyaneh, Luca Gregoratti, Alfonso Franciosi, Andrew C.E. Chia, Ray R. LaPierre, Silvia Rubini, Contactless spatially resolved monitoring of doping along single GaAs nanowires, European Conference on Materials and Technologies for Sustainable Growth (Sept 19-21, 2013, Bled, Slovenia).
  • Oral Presentation, A.C.E. Chia and R.R. LaPierre, Surface passivation of GaAs nanowire ensembles for photovoltaic applications, Nanotech 2013 (May 12-15, 2013, Washington, DC).
  • Oral Presentation (Third Place for Best Oral Presentation), A.C.E. Chia and R.R. LaPierre, Analytical modeling of radial p-n junction solar cells, Next Generation Solar 2013 – Photovoltaics Canada – Third National Scientific Conference (May 8-10, 2013, Hamilton, Canada).
  • Oral presentation, O. Salehzadeh, K. L. Kavanagh and S. P. Watkins “Geometric limits of coherent V-III core/shell nanowires” Next Generation Photovoltaics National Conference, McMaster University, May 8, 2013.
  • Oral Presentation (Third Place for Best Oral Presentation), A.C.E. Chia and R.R. LaPierre, Analytical modeling of radial p-n junction solar cells, Next Generation Solar 2013 – Photovoltaics Canada – Third National Scientific Conference (May 8-10, 2013, Hamilton, Canada)
  • A.T. Connie, H. P. T. Nguyen, I. Shih, and Z. Mi, “Molecular Beam Epitaxial Growth of InGaN/GaN Nanowire Solar Cells”, Next Generation Solar 2013, 4th Canadian Photovoltaics Conference,Hamilton, ON, May 8-10, 2013.
  • Oral Presentation, A.C.E. Chia and R.R. LaPierre, Surface passivation of GaAs nanowire ensembles for photovoltaic applications, Nanotech 2013 (May 12-15, 2013, Washington, DC).
  • Oral Presentation, A.C.E. Chia, J.P Boulanger and R.R. LaPierre, Unlocking doping and compositional profiles of nanowire ensembles using SIMS, Materials Research Society Spring Meeting 2013 (San Francisco, Apr. 1-5, 2013).
  • S. Y. Woo, S. Turner, N. Gauquelin, H. P. T. Nguyen, Z. Mi, G. A. Botton, “Effect of Strain Distribution on Indium Incorporation in InGaN/GaN Dot-in-a-wire Nanostructures by Electron Energy-loss Spectroscopy”, Material Research Society Fall 2012, Hynes Convention Center, Boston, MA, November 25 – 30, 2012.
  • O. Salehzadeh, K. L. Kavanagh, and S. P. Watkins, “Growth and strain relaxation of GaAs/GaSb core/shell nanowires”, APS NW Section Meeting 19 Oct 2012, oral presentation.
  • O. Salehzadeh, K.L. Kavanagh, S.P. Watkins, “Controlled n- and p-type doping of GaAs nanowires”, oral presentation, International Symposium on Compound Semiconductors, Santa Barbara, August 29, 2012.
  • O. Salehzadeh, K.L. Kavanagh, and S.P. Watkins, “Te-Doping of GaAs Nanowires Grown by MOVPE”, International Conference on Metalorganic Vapor Phase Epitaxy, Busan, Korea, 2012.
  • A. Ahktari-Zavareh, S. Alagha, O. Salehzadeh, S. P. Watkins, and K. L. Kavanagh, “BEEM and in situ SEM nanoprobe measurements of Au/Cr/ GaAs Nanowires”, oral presentation, International Conference on Nanoscience + Technology (ICN+T2012) , July 23-27, 2012, Paris.
  • Oral Presentation, A.C.E. Chia and R.R. LaPierre, Surface passivation of GaAs nanowires, 24th Canadian Materials Science Conference (June 5 – 8, 2012, University of Western Ontario).
  • Oral Presentation, J. Boulanger and R.R. LaPierre, Investigation of Au-assisted VLS nanowire growth behavior across GaAs/GaP hetero-interfaces, 6th Nanowire Growth Workshop (June 4 – 6, 2012, St. Petersburg, Russia).
  • H. P. T. Nguyen, Y. Li, I. Shih, and Z. Mi, “InGaN/GaN Nanowires for Next Generation Photovoltaics”, Next Generation Solar 2012, Montreal, Quebec, Canada, May 14-15, 2012.
  • O. Salehzadeh, K. L. Kavanagh, and S. P. Watkins, “Controlled n- and p-type doping of GaAs nanowires” oral presentation, Photovoltaics Canada, National Conference, May 2012.
  • Second Prize for Best Oral Presentation, A.C.E Chia, Y. Li, S. Zhao, Z. Mi and R.R. LaPierre, Surface passivation of gallium arsenide nanowires for photovoltaic applications, Next Generation Solar Photovoltaics Canada National Scientific Conference 2012 (May 14-15, 2012, Montreal, Canada).
  • Oral Presentation, J.P. Boulanger, Y. Hu, S. Gibson and R.R. LaPierre, Nanowire photovoltaics from the bottom-up, Next Generation Solar Photovoltaics Canada National Scientific Conference 2012 (May 14-15, 2012, Montreal, Canada).
  • H. P. T. Nguyen, Y. Li, and Z. Mi, “Large Area InGaN/GaN Nanowire Solar Cells on Silicon,” CLEO 2012, San Jose, CA, May 6-11, 2012.
  • R.R. LaPierre, A.C.E. Chia, C.M. Haapamaki, N. Tajik, Y. Li, S. Zhao, and Z. Mi, “Passivation of III-V Nanowires for Optoelectronics”, invited presentation, Proceedings of the 221st Electrochemical Society Meeting, ECS Transactions, Volume 45 (May 6 – 10, 2012, Seattle, WA).
  • A. Ahktari-Zavareh, O.Salehzadeh, S. Alagha, S.P. Watkins, and K.L. Kavanagh, “BEEM and in situ SEM nanoprobe measurements of Au-GaAs Nanowires” oral presentation, Spring PCSI meeting, Santa Fe, NM, January 22, 2012.
  • O. Salehzadeh, C. Herrmann, X. Zhang, B. Gates, K.L. Kavanagh, and S.P. Watkins, “Electrical Properties of Tellurium- and Carbon-Doped GaAs Nanowires”, Fall MRS Meeting, November 2011.
  • Oral Presentation, Omid Salehzadeh, Christoph Herrmann, Xin Zhang, Byron Gates, Karen Kavanagh and Simon Watkins, “Electrical Properties of Tellurium- and Carbon-Doped GaAs Nanowires”, Materials Research Society Fall Meeting (November 28, 2011).
  • Oral Presentation, Omid Salehzadeh and Simon Watkins “Control of III-V Nanowire Epitaxy by Precursor Chemistry” (Electronic Materials Conference, Santa Barbara, CA, June 2011).
  • Oral presentation, O. Salehzadeh and S P Watkins, “Effect of Carbon Doping on Morphology and Structure of GaAs Nanowires”, 15th Int. Conf. Organometallic Vapor Phase Epitaxy XV, Lake Tahoe, May 25, 2011.
  • Oral Presentation, Z. Mi, H. P. T. Nguyen, K. Cui, Md. G. Kibria, D. Wang and I. Shih, “Harvesting solar energy using group III-nitride nanowires,” Photonics North and Photovoltaics 2nd National Scientific Conference (Ottawa, ON, May 16-18, 2011).
  • Oral Presentation, J.P. Boulanger and R.R. LaPierre, Transient Supersaturation Effects of Au VLS Catalysts on the Growth of Low-Dimensional Axial GaAs/GaP Heterostructure Nanowires for Optoelectronic Applications, 2011 MRS Spring Meeting (Apr 25 – 29, 2011, San Francisco, California).
  • Oral Presentation, A.C.E. Chia and R.R. LaPierre, Surface Passivation of GaAs Nanowires, 2011 MRS Spring Meeting (Apr 25 – 29, 2011, San Francisco, California).
  • Oral Presentation, Omid Salehzadeh and Simon Watkins, “Control of Nanowire Morphology by Choice of Precursor Chemistry”, Spring Materials Research Society Meeting (San Francisco, April 27, 2011).
  • Y.-L. Chang, F. Li, H. P. T. Nguyen, and Z. Mi, “Optical and electrical transport properties of nearly intrinsic and Si-doped InN nanowires,” Electronic Materials Conference 2010, Notre Dame, Indiana, USA, June 23-25, 2010.
  • Y.-L. Chang, H. P. T. Nguyen, I. Shih, and Z. Mi, “Vertically aligned InN p-i-n nanowire solar cells on Si,” Photonics North 2010 and Photovoltaics Canada First National Scientific Conference, Niagara Falls, ON, Canada, June 1-3, 2010.
  • O. Salehzadeh and S. P. Watkins, “Control of III-V nanowire morphology by precursor chemistry”, 15th Annual Meeting of the Pacific Center for Advanced Materials (PCAMM 2010), British Columbia, Canada.

Presentations (Poster)

  • Poster Presentation, A. Darbandi, K.L.Kavanagh, and S.P. Watkins, Electrical analysis of radial charge transport in free-standing GaAs core-shell nanowires, EW-MOVPE Meeting (Lund, Sweden, June 2015).
  • Poster Presentation, V. McLaren and R.R. LaPierre, Optimization of silicon sub-cell for use in GaAs nanowire / c-Si tandem solar cell, 4th Annual McMaster Engineering Graduate Student Conference (Aug. 13, 2014, Hamilton, Canada).
  • Poster Presentation, J. Zhang and R.R. LaPierre, Low resistance indium tin oxide contact to n-GaAs nanowires, 4th Annual McMaster Engineering Graduate Student Conference (Aug. 13, 2014, Hamilton, Canada).
  • Mingze Yang, Ali Darbandi, Simon Watkins, and Karen Kavanagh, “Electrodeposition of Fe onto GaAs (111) Nanowires”, Nanolytica Conference, Simon Fraser University, March 12, 2014 (poster presentation)
  • A. Dharbandi, O. Salehzadeh, S.P. Watkins “Surface passivation of tellurium-doped GaAs nanowires by GaP shell”, Next Generation Photovoltaics National Conference, McMaster University, May 2013, poster contribution.
  • Poster Presentation, O. Salehzadeh, K. L. Kavanagh and S. P. Watkins , “Growth and strain relaxation of GaSb shell on GaAs nanowires”, Spring Materials Research Society Meeting, San Francisco, April 3, 2013, poster contribution.
  • A. Darbandi, O. Salehzadeh, S. P. Watkins, “Surface passivation of tellurium-doped GaAs nanowires by GaP shell”, Pacific Centre for Advanced Materials and Microstructures Annual Meeting, UBC, December 7, 2013, poster presentation.
  • 3rd Prize for Poster Presentation, A.C.E. Chia, J.P. Boulanger and R.R. LaPierre, “SIMS analysis of III-V nanowires”, 3rd Annual Nano Ontario Conference 2012 (Oct. 11-12, 2012, University of Waterloo, Ontario, Canada).
  • Poster Presentation, J.P. Boulanger and R.R. LaPierre, “Gold-assisted VLS nanowire growth behavior in GaAs, GaP, and mixed GaAs/GaP structures”, 3rd Annual Nano Ontario Conference 2012 (Oct. 11-12, 2012, University of Waterloo, Ontario, Canada).
  • Poster Presentation, A.C.E. Chia and R.R. LaPierre, “Surface passivation of GaAs nanowires”, International Conference on the Physics of Semiconductors (July 29 – August 3, 2012, ETH Zurich).
  • Poster Presentation, A. Ahktari-Zavareh, O. Salehzadeh, S. Alagha, S.P. Watkins,K.L. Kavanagh, “BEEM and in situ SEM nanoprobe measurements of Au-GaAs Nanowires”, Annual Meeting of the Pacific Center for Advanced Materials and Microstructures (University of Victoria, BC, 10 December, 2011).
  • Poster Presentation, O. Salehzadeh, K.L. Kavanagh and S.P. Watkins, “Te-doping of GaAs nanowires”, Annual Meeting of the Pacific Center for Advanced Materials and Microstructures (University of Victoria, BC, 10 December, 2011).
  • Poster Presentation, A.C.E. Chia and R.R. LaPierre, Surface passivation of gallium arsenide nanowires for photovoltaic applications, Nano Ontario Conference and Workshop 2011 (Oct 14-15, 2011, McMaster University, Hamilton, Ontario).
  • Poster Presentation, J.P. Boulanger and R.R. LaPierre, Patterned Au-assisted VLS growth of III-V nanowires on Si (111) by MBE: challenges and obstacles, Nano Ontario Conference and Workshop 2011 (Oct 14-15, 2011, McMaster University, Hamilton, Ontario).
  • Poster presentation, O. Salehzadeh and S. P. Watkins, “Investigation of the growth of GaAs and InAs/GaAs core/shell nanowires”, 15th Annual Meeting of the Pacific Center for Advanced Materials (PCAMM 2010), British Columbia, Canada.

Theses

  • A.C.E. Chia, Electrical characterization and optimization of gallium arsenide nanowire ensemble devices, PhD thesis, Department of Engineering Physics, McMaster University, completed Sept 2013.
  • J. Boulanger, Unveiling transient behaviors in heterostructure nanowires, PhD thesis, Department of Engineering Physics, McMaster University, completed Sept 2013.
  • O. Salehzadeh, Control of nanowire morphology and doping, PhD thesis, Department of Physics, Simon Fraser University, completed August 2013.

Patents (USA, Provisional)

  • Multi-Spectral Optoelectronic Devices Based on the Diameter-Tuning of Nanowires, US Provisional Patent 62/025,106
  • Method of Forming Low Resistance Transparent Conducting Contacts to Semiconductor Nanowires, US Provisional Patent 62/025,125
  • Method to improve the yield and crystal structure of aligned epitaxial III-V nanowires on lithographically patterned substrates, US Provisional Patent 62/025,106